L2N7002LT1G 数据手册
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技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: LRC L2N7002LT1G
- Power Dissipation (Pd): 300mW
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 0.115A
- Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 7.5Ω@10V,500mA
- Package: SOT-23
- Manufacturer: LRC